Liquid antimony pentachloride as oxidant for robust oxidative chemical vapor deposition of poly(3,4-ethylenedioxythiophene) films

نویسندگان

چکیده

The oxidative chemical vapor deposition (oCVD) process is investigated to produce poly (3,4-ethylenedioxythiophene) (PEDOT) thin films on 10 cm diameter Si wafers, involving the SbCl5 liquid oxidant. Process/structure/properties correlations are thoroughly studied, including influence of SbCl5/EDOT ratio, substrate temperature (Tsub), total pressure and duration, thickness, composition, morphology, spatial uniformity films, their electrical conductivity optical transmittance. increases by decreasing oxidant/EDOT ratio increasing temperature. Such increase results in decrease deposited mass thickness. Films improved pressure. Operating at 75 Pa equal uniform thickness substrates located all over chamber, proving potential PEDOT-SbCl5 oCVD be scaled up larger surfaces. absence post rinsing allows developing a full dry process, which interest coat sensitive can thus implemented for processing devices requiring durable, transparent, conductive PEDOT particular field optoelectronics.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Oxidative chemical vapor deposition of polyaniline thin films

Polyaniline (PANI) is synthesized via oxidative chemical vapor deposition (oCVD) using aniline as monomer and antimony pentachloride as oxidant. Microscopy and spectroscopy indicate that oCVD processing conditions influence the PANI film chemistry, oxidation, and doping level. Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and X-ray photoelectron spectroscop...

متن کامل

Direct-Liquid-Injection Chemical Vapor Deposition of Nickel Nitride Films and Their Reduction to Nickel Films

Smooth and continuous films of nickel nitride (NiNx) with excellent step coverage were deposited from a novel nickel amidinate precursor, Ni(MeC(NBu)2)2, and either ammonia (NH3) or amixture of NH3 and hydrogen (H2) gases as co-reactants. The reactants were injected together in direct-liquidinjection chemical vapor deposition (DLI-CVD) processes at substrate temperatures of 160-200 C. Depending...

متن کامل

Direct-liquid-evaporation chemical vapor deposition of smooth, highly conformal cobalt and cobalt nitride thin films

By a direct-liquid-evaporation chemical vapor deposition (DLE-CVD) method, we deposited smooth lowresistance cobalt (Co) and cobalt nitride (CoxN) thin films with excellent conformality at low temperatures down to 200 1C. In the DLE process, a cobalt amidinate precursor solution, bis(N,N0-diisopropylacetamidinato)cobalt(II) dissolved in tetradecane, was vaporized as it flowed smoothly, without ...

متن کامل

Chemical vapor deposition of HfO2 films on Si„100..

HfO2 films were grown on Si~100! by chemical vapor deposition as an attempt to develop an industrially straightforward gate dielectric deposition process. During deposition at ;400 °C the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor provides sufficient oxygen to produce a stoichiometric HfO2 film. Medium energy ion scattering, high resolution transmission electron micro...

متن کامل

Initiated Chemical Vapor Deposition of Functional Polyacrylic Thin Films

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<2000 C) and initialize addition reaction of monomer species. The use of low temperatures limits the decomposition chemistry to the bond scission of initiator, while retaining funct...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Surface Science

سال: 2021

ISSN: ['1873-5584', '0169-4332']

DOI: https://doi.org/10.1016/j.apsusc.2021.149501